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isc Silicon NPN Power Transistor BU508FI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 700 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current- Continuous 8 A C I Collector Current-Peak 15 A CM Collector Power Dissipation P 60 W C @ T =25 C T Junction Temperature 150 J Storage Temperature Range -65 150 T stg SYMBOL PARAMETER MAX UNIT Thermal Resistance,Junction to Case 2.08 /W R th j-c 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Pow... See More ⇒

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