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View buz11a detailed specification:

isc N-Channel Mosfet Transistor BUZ11A FEATURES Static Drain-Source On-Resistance R = 0.055 (Max) DS(on) Avalanche rugged technology High current capability 175 Operating Temperature High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High current,high speed switching Solenoid and relay drivers Regulators DC-DC & DC-AC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=25 26 A D I Drain Current-Single Plused 104 A DM P Total Dissipation@TC=25 75 W tot T Max. Operating Junction Temperature 175 j T Storage Temperature Range -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Juncti... See More ⇒

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