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View ipp111n15n3 detailed specification:

isc N-Channel MOSFET Transistor IPP111N15N3 IIPP111N15N3 FEATURES Static drain-source on-resistance RDS(on) 11.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 83 A D I Drain Current-Single Pulsed 332 A DM P Total Dissipation @T =25 214 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.7 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc w... See More ⇒

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