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View irf2804s detailed specification:

isc N-Channel MOSFET Transistor IRF2804S DESCRIPTION Static drain-source on-resistance RDS(on) 6m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 40 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@T =100 200 A D C I Pulse Drain Current 1080 A DM P Total Dissipation 330 W tot T Max. Operating Junction Temperature 175 j T Storage Temperature Range -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.45 th j-c 1 isc website www.iscsemi.com isc & iscsemi is regis... See More ⇒

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