View irf460 detailed specification:
isc N-Channel MOSFET Transistor IRF460 DESCRIPTION Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for applications such as switching power Supplies ,motor controls ,inverters ,choppers ,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=25 21 A D P Total Dissipation@TC=25 300 W tot T Max. Operating Junction Temperature -55 150 j T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 0.42 th j-c /W R Therma... See More ⇒
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irf460.pdf Design, MOSFET, Power
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