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View irf520 detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF520 FEATURES Typical R =0.27 DS(on) Avalanche Rugged Technology High Current Capability Low Gate Charge 175 Operating Temperature Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Current ,High Speed Switching DC-DC&DC-AC Converters Motor Control ,Audio Amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 10 A D I Drain Current-Single Plused 40 A DM P Total Dissipation @T =25 70 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -65 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 2.14 th j-c /W R The... See More ⇒

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