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View irf5210spbf detailed specification:

INCHANGE Semiconductor isc P-Channel MOSFET Transistor IRF5210SPBF FEATURES P-channel With TO-263(D2PAK) packaging Uninterruptible power supply High speed switching Ultra low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -100 V DSS V Gate-Source Voltage 20 V GSS Drain Current-Continuous@T =25 C -38 I A D -24 T =100 C I Drain Current-Single Pulsed -140 A DM P Total Dissipation 170 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.75 /W Rth(ch-a) Channel-to-ambient thermal resis... See More ⇒

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