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View irf540a detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540A FEATURES Static drain-source on-resistance RDS(on) 52m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous@ TC=25 28 A D I Drain Current-Single Plused 110 A DM P Total Dissipation @T =25 110 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 1.36 th j-c 1 isc website www.iscsemi.com isc & iscsemi is... See More ⇒

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