View irf540fi detailed specification:
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF540FI FEATURES Low R DS(on) V Rated at 20V GS Silicon Gate for Fast Switching Speed Rugged Low Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 16 A D I Drain Current-Single Plused 120 A DM P Total Dissipation @T =25 45 W D C T Max. Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Therma... See More ⇒
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irf540fi.pdf Design, MOSFET, Power
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