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View irf6218 detailed specification:

irf6218irf6218

isc P-Channel MOSFET Transistor IRF6218,IIRF6218 FEATURES Static drain-source on-resistance RDS(on) 0.15 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Reset switch for active clamp Reset DC-DC converters Low gate to drain charge to reduce switching losses ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -150 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous -27 A D I Drain Current-Single Pulsed -110 A DM P Total Dissipation @T =25 250 W D C Max. Operating Junction Temperature 175 T j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(j-c) Channel-to-case thermal resistance 0.61 Rth(j-a) Channel-to-ambient thermal resistance /W ... See More ⇒

 

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