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View irfb3004 detailed specification:

isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 FEATURES Static drain-source on-resistance RDS(on) 1.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 340 A D I Drain Current-Single Pulsed 1310 A DM P Total Dissipation @T =25 380 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.4 Channel-to-... See More ⇒

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