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View irfb3206 detailed specification:

isc N-Channel MOSFET Transistor IRFB3206,IIRFB3206 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 210 A D I Drain Current-Single Pulsed 840 A DM P Total Dissipation @T =25 300 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.5 Channel-to-ambien... See More ⇒

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