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View irfb38n20d detailed specification:

isc N-Channel MOSFET Transistor IRFB38N20D IIRFB38N20D FEATURES Static drain-source on-resistance RDS(on) 54m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 43 A D I Drain Current-Single Pulsed 180 A DM P Total Dissipation @T =25 300 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.47 Channel-to-ambient thermal resistance /W Rth(ch-a) 62 1 isc website www.iscsemi.cn isc & iscsem... See More ⇒

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