All Transistors. Equivalents Search

View irfp250n detailed specification:

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N IIRFP250N FEATURES Static drain-source on-resistance RDS(on) 75m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 30 A D I Drain Current-Single Pulsed 120 A DM P Total Dissipation @T =25 214 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 0.7 Channel-to-ambient thermal resistance /W Rth(j-a) 40 1 isc website www.iscsemi.cn isc & iscsemi is registered tradema... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irfp250n.pdf Design, MOSFET, Power

 irfp250n.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irfp250n.pdf Database, Innovation, IC, Electricity