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ixtk110n20l2ixtk110n20l2

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTK110N20L2 FEATURES With TO-3PL package Low input capacitance and gate charge High speed switching Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 200 V DSS V Gate-Source Voltage 30 V GSS I Drain Current-Continuous 110 A D I Drain Current-Single Pulsed 275 A DM P Total Dissipation @T =25 960 W D C Tj Max. Operating Junction Temperature 150 Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.13 /W Rth(ch-a) Channel-to-ambient thermal resi... See More ⇒

 

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