View je13007 detailed specification:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13007 DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 700 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 8 A ICM Collector current-Peak 16 A IB Base current 4 A IBM Base current-Peak 8 A IE Emitter current 12 A IEM Emitter current-Peak 24 A PD Total power dissipation TC=25 80 W Tj Junction tempera... See More ⇒
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je13007.pdf Design, MOSFET, Power
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