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View ktb688 detailed specification:

isc Silicon PNP Power Transistor KTB688 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type KTD718 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -10 A C I Base Current-Continuous -1 A B Collector Power Dissipation P 80 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transi... See More ⇒

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