All Transistors. Equivalents Search

View mje13009f detailed specification:

isc Silicon NPN Power Transistor MJE13009F DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Collector Saturation Voltage V = 1.5 (Max) @ I = 8.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current-Continuous 12 A C I Collector Current-peak 24 A CM I Base Current 6 A B I Base Current-Peak 12 A BM Collector Power Dissipatio... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 mje13009f.pdf Design, MOSFET, Power

 mje13009f.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mje13009f.pdf Database, Innovation, IC, Electricity