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isc Silicon NPN Power Transistor NJW0281G DESCRIPTION High Collector-Emitter Breakdown Voltage- V =250V(Min) (BR)CEO Good Linearity of h FE Complement to Type NJW0302G Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high fidelity audio amplifier and other linear applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 250 V CBO V Collector-Emitter Voltage 250 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 15 A C I Base Current-Continuous 1.5 A B Collector Power Dissipation P 150 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -65 150 stg isc website www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor NJW0281G ELECTRICAL CHARACTERISTICS T =2... See More ⇒

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