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View stw77n65m5 detailed specification:

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW77N65M5 FEATURES With TO-247 package Low input capacitance and gate charge Low gate input resistance Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage 25 V GSS Drain Current-Continuous @Tc=25 69 I A D 41.5 Tc=100 I Drain Current-Single Pulsed 276 A DM P Total Dissipation @T =25 400 W D C Tj Max. Operating Junction Temperature 150 Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.31 /W Rth(ch-a) Channel-to-ambient thermal resistance 50 1 isc ... See More ⇒

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