View tip35 tip35a tip35b tip35c detailed specification:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION With TO-3PN package Complement to type TIP36/36A/36B/36C DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT TIP35 40 TIP35A 60 VCBO Collector-base voltage Open emitter V TIP35B 80 TIP35C 100 TIP35 40 TIP35A 60 VCEO Collector-emitter voltage Open base V TIP35B 80 TIP35C 100 VEBO Emitter-base voltage Open collector 5 V IC Collector current 25 A ICM Collector current-peak 40 A IB Base current 5 A PC Collector power dissipation TC=25 125 W Tj Juncti... See More ⇒
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tip35 tip35a tip35b tip35c.pdf Design, MOSFET, Power
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BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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