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View tip41e detailed specification:

isc Silicon NPN Power Transistors TIP41E DESCRIPTION DC Current Gain -h = 30(Min)@ I = 0.3A FE C Collector-Emitter Sustaining Voltage- V = 140V(Min) CEO(SUS) Complement to Type TIP42E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 6 A C I Collector Current-Peak 10 A CM I Base Current 3 A B Collector Power Dissipation 65 T =25 C P W C Collector Power Dissipation 2 T =25 a T Junction Temperature 150 j T Storage Temperature Range -65 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Res... See More ⇒

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