View ikp10n60trev2 3g detailed specification:
IKP10N60T TrenchStop Series p Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers - very tight parameter distribution PG-TO-220-3-1 - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-... See More ⇒
Keywords - ALL TRANSISTORS SPECS
ikp10n60trev2 3g.pdf Design, MOSFET, Power
ikp10n60trev2 3g.pdf RoHS Compliant, Service, Triacs, Semiconductor
ikp10n60trev2 3g.pdf Database, Innovation, IC, Electricity
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet


