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View ipb108n15n3g ipp111n15n3g ipi111n15n3g detailed specification:

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max (TO263) 10.8 mW Excellent gate charge x R product (FOM) DS(on) ID 83 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package PG-TO263 PG-TO220-3 PG-TO262-3 Marking 108N15N 111N15N 111N15N Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 83 A D C T =100 C 59 C I T =25 C 332 Pulsed drain current2) D,pulse C E Avalanche... See More ⇒

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