View ipb114n03l-g ipp114n03l-g detailed specification:
Type IPP114N03L G IPB114N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 11.4 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant Type IPP114N03L G IPB114N03L G Package PG-TO220-3 PG-TO263-3 Marking 114N03L 114N03L Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I V =10 V, T =25 C Continuous drain current 30 A D GS C V =10 V, T =100 C 30 GS C V =4.5 V, T =25 C 30 GS C V =4.5 V, GS 26 T =100 C C I T =25 C 210 Pulsed drain current2) D,pulse C T =25 C 30 Avalanche current, singl... See More ⇒
Keywords - ALL TRANSISTORS SPECS
ipb114n03l-g ipp114n03l-g.pdf Design, MOSFET, Power
ipb114n03l-g ipp114n03l-g.pdf RoHS Compliant, Service, Triacs, Semiconductor
ipb114n03l-g ipp114n03l-g.pdf Database, Innovation, IC, Electricity
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