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View ipd50n04s4-08 ds 1 0 detailed specification:

IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 7.9 m DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N04S4-08 PG-TO252-3-313 4N0408 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10V 50 A Continuous drain current1) D C GS T =100 C, V =10V2) 47 C GS I T =25 C 200 Pulsed drain current2) D,pulse C I =25A 55 mJ Avalanche energy, single pulse2) E AS D I Avalanche current, single pulse - 50 A AS V - Gate source voltage 20 V GS P T =25 C Power dissipation 46 W tot C T , T - Operating and storage temperature -55 ... +175 C j stg IEC climatic category... See More ⇒

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 ipd50n04s4-08 ds 1 0.pdf Design, MOSFET, Power

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