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View ipd70n04s3-07 ds 1 0 detailed specification:

IPD70N04S3-07 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 6.0 m DS(on),max I 82 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C, V =10 V Continuous drain current 82 A D C GS T =100 C, C 58 V =10 V1) GS I T =25 C 280 Pulsed drain current1) D,pulse C E I =50 A Avalanche energy, single pulse 145 mJ AS D V Gate source voltage 20 V GS P T =25 C Power dissipation 79 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category; DIN IEC 68-1 55/175/56 Rev.... See More ⇒

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 ipd70n04s3-07 ds 1 0.pdf Design, MOSFET, Power

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