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View smbt3906u detailed specification:

SMBT3906U PNP Silicon Switching Transistor Array 4 High DC current gain 0.1mA to 100mA 5 6 Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package 3 2 Complementary type SMBT3904U (NPN) 1 C1 B2 E2 VPW09197 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07175 Type Marking Pin Configuration Package SMBT3906U s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage 40 V VCEO Collector-base voltage 40 VCBO Emitter-base voltage 5 VEBO DC collector current 200 mA IC 330 mW Total power dissipation, TS = 105 C Ptot Junction temperature 150 C Tj Storage temperature -65 ... 150 Tstg Thermal Resistance Junction - soldering point1) RthJS 135 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 SMBT39... See More ⇒

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