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View spp100n08s2-07 spb100n08s2-07 detailed specification:

SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.8 m Enhancement mode ID 100 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP100N08S2-07 P- TO220 -3-1 Q67060-S6044 PN0807 SPB100N08S2-07 P- TO263 -3-2 Q67060-S6046 PN0807 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit A Continuous drain current 1) ID TC=25 C 100 100 400 Pulsed drain current ID puls TC=25 C 810 mJ Avalanche energy, single pulse EAS ID=80 , VDD=25V, RGS=25 EAR 30 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt dv/dt 6 kV/ s IS=100A, VDS=60V, di/dt=200A/ s, Tjmax=175 C Gate source voltage VGS V 20 Power dissipation Ptot 300 W TC=25 C C... See More ⇒

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