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View auirf1010ezstrl detailed specification:

PD - 95962 AUTOMOTIVE GRADE AUIRF1010EZ AUIRF1010EZS AUIRF1010EZL Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V(BR)DSS 60V 175 C Operating Temperature Fast Switching RDS(on) max. 8.5m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) 84A Lead-Free, RoHS Compliant S Automotive Qualified * ID (Package Limited) 75A Description D D D Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction S S D D S operating temperature, fast switching speed and improved G G GD repetitive avalanche rating . These features combine to make D2Pak TO-220AB TO-262 this design an extremely efficient and reliable device for use AUIR... See More ⇒

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