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View auirf2804strr detailed specification:

auirf2804strrauirf2804strr

AUTOMOTIVE GRADE PD -96290A AUIRF2804 AUIRF2804S AUIRF2804L Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance V(BR)DSS 40V D l 175 C Operating Temperature RDS(on) typ. 1.5m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax max. 2.0m G l Lead-Free, RoHS Compliant ID (Silicon Limited) 270A l Automotive Qualified * S ID (Package Limited) 195A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest D D D processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, S S D S fast switching speed and improved repetitive ava- D G D G lanche rating . These features combine to make this G design an extremely efficient and reliable device for TO-220... See More ⇒

 

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