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View auirf2804wl detailed specification:

PD - 97739 AUTOMOTIVE GRADE AUIRF2804WL HEXFET Power MOSFET Features D V(BR)DSS l Advanced Process Technology 40V l Ultra Low On-Resistance RDS(on) max. 1.8m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 295A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 240A l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, S fast switching speed and improved repetitive ava- D lanche rating . These features combine to make this G design an extremely efficient and reliable device for TO-262 WideLead use in Automotive applications and a wide variety of ... See More ⇒

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