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View auirf6215s detailed specification:

AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Specifically designed for Automotive applications, D G this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve D2Pak low on-resistance per silicon area. This benefit AUIRF6215S combined with the fast switching speed and rugge- dized device design that HEXFET power MOSFETs GDS are well known for, provides the designer with an Gate Drain Source extremely efficient and reliable device for use in Automotive and a wide variety of other applications... See More ⇒

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 auirf6215s.pdf Design, MOSFET, Power

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