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View auirf6218l auirf6218s detailed specification:

AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175 C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D Description Specifically designed for Automotive applications, S D S this cellular design of HEXFET Power MOSFETs G GD utilizes the latest processing techniques to achieve D2Pak TO-262 low on-resistance per silicon area. This benefit AUIRF6218S AUIRF6218L combined with the fast switching speed and rugge- dized device design that HEXFET power MOSFETs are well known for, provides the designer with an G D S extremely efficient and reliable device for use in Gate Drain Source ... See More ⇒

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