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View auirf9540n detailed specification:

PD - 97626 AUTOMOTIVE GRADE AUIRF9540N Features l Advanced Planar Technology D l Dynamic dV/dT Rating V(BR)DSS -100V l 175 C Operating Temperature l Fast Switching RDS(on) max. 0.117 G l Fully Avalanche Rated l Repetitive Avalanche Allowed ID -23A S up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description S Specifically designed for Automotive applications, D G this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve TO-220AB low on-resistance per silicon area. This benefit AUIRF9540N combined with the fast switching speed and ruggedized device design that HEXFET power G D S MOSFETs are well known for, provides the designer Gate Drain Source with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Absolute Maximum Ratings Stre... See More ⇒

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