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View irf2804 detailed specification:

PD - 94436B AUTOMOTIVE MOSFET IRF2804 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 40V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 2.3m Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and im- proved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @... See More ⇒

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