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View irf2804lpbf irf2804pbf irf2804spbf detailed specification:

PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 2.0m l Lead-Free G ID = 75A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other TO-220AB D2Pak TO-262 applications. IRF2804PbF IRF2804SPbF IRF2804LPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 270 A Continuous Drain Current, VGS @ 10V (Si... See More ⇒

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