View irf3710z detailed specification:
PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m 175 C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automo- tive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C 59 A Continuous Drain ... See More ⇒
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irf3710z.pdf Design, MOSFET, Power
irf3710z.pdf RoHS Compliant, Service, Triacs, Semiconductor
irf3710z.pdf Database, Innovation, IC, Electricity
