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View irf540zlpbf irf540zspbf detailed specification:

PD - 95531A IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Features HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 26.5m G Lead-Free ID = 36A Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combine to make this design an extremely efficient and reliable device for use in a wide variety of TO-220AB D2Pak TO-262 applications. IRF540ZPbF IRF540ZSPbF IRF540ZLPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 36 I... See More ⇒

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