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View irf840lcs detailed specification:

PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET Ultra Low Gate Charge D Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS RDS(on) = 0.85 Extremely High Frequency Operation G Repetitive Avalanche Rated ID = 8.0A Description S This new series of low charge HEXFET power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. These device improvements combined with the proven D2Pak TO-2... See More ⇒

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