View irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf detailed specification:
IRFB31N20DPbF SMPS MOSFET IRFS31N20DPbF IRFSL31N20DPbF AppIications HEXFET Power MOSFET l High Frequency DC-DC converters l Lead-Free VDSS RDS(on) max ID 200V 0.082 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRFB31N20DPbF IRFS31N20DPbF IRFSL31N20DPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 21 A IDM Pulsed Drain Current 124 PD @TA = 25 C Power Dissipation 3.1 W PD @TC = 25 C Power Dissipation 200 Linear Derating Factor 1.3 W/ C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 2.1 V/ns TJ Operating Junction and -55 to + 1... See More ⇒
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irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf Design, MOSFET, Power
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf RoHS Compliant, Service, Triacs, Semiconductor
irfb31n20dpbf irfs31n20dpbf irfsl31n20dpbf.pdf Database, Innovation, IC, Electricity
