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View irfb3207zgpbf detailed specification:

PD - 96201 IRFB3207ZGPbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS D VDSS 75V l Uninterruptible Power Supply RDS(on) typ. 3.3m l High Speed Power Switching max. 4.1m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 170A ID (Package Limited) S 120A Benefits D l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA S D l Enhanced body diode dV/dt and dI/dt G Capability TO-220AB l Lead-Free IRFB3207ZGPbF l Halogen-Free GDS Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 170 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V (Silicon Limited) 120 A ID @ TC = 25 C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120 IDM Pulsed Drain ... See More ⇒

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