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View irfb38n20dpbf irfs38n20dpbf detailed specification:

PD - 97001C IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF HEXFET Power MOSFET Applications Key Parameters l High frequency DC-DC converters VDS 200 V l Plasma Display Panel VDS (Avalanche) min. 260 V Benefits RDS(ON) max @ 10V m 54 l Low Gate-to-Drain Charge to TJ max 175 C Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current D2Pak TO-262 TO-220AB l Lead-Free IRFS38N20DPbF IRFSL38N20DPbF IRFB38N20DPbF Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 43* ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 30* A IDM Pulsed Drain Current 180 PD @TA = 25 C Power Dissipation 3.8 W PD @TC = 25 C Power Dissipation 300* Linear Derating Factor 2.0* W/ C VGS ... See More ⇒

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