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View irfp4332pbf detailed specification:

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 C and Pass Switch Applications l Low QG for Fast Response l High Repetitive Peak Current Capability for D D Reliable Operation l Short Fall & Rise Times for Fast Switching l175 C Operating Junction Temperature for S Improved Ruggedness D G G l Repetitive Avalanche Capability for Robustness and Reliability S TO-247AC GDS Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest p... See More ⇒

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