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View irg7ph30k10 detailed specification:

PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features C Low VCE (ON) Trench IGBT Technology VCES = 1200V Low Switching Losses Maximum Junction Temperature 175 C IC = 23A, TC = 100 C 10 S short Circuit SOA Square RBSOA G tSC 10 s, TJ(max) =175 C 100% of the parts tested for ILM E Positive VCE (ON) Temperature Co-Efficient VCE(on) typ. = 2.05V Tight Parameter Distribution n-channel Lead Free Package C E C Benefits G High Efficiency in a Wide Range of Applications Suitable for a Wide Range of Switching Frequencies due to TO-247AC Low VCE (ON) and Low Switching Losses Rugged Transient Performance for Increased Reliability Excellent Current Sharing in Parallel Operation GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage... See More ⇒

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