All Transistors. Equivalents Search

View irg7ph42ud1 detailed specification:

IRG7PH42UD1PbF IRG7PH42UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V Low VCE (ON) trench IGBT technology Low switching losses Square RBSOA I NOMINAL = 30A Ultra-low VF Diode G 1300Vpk repetitive transient capacity TJ(max) = 150 C 100% of the parts tested for ILM E Positive VCE (ON) temperature co-efficient VCE(on) typ. = 1.7V n-channel Tight parameter distribution Lead free package G G Benefits E E Device optimized for induction heating and soft switching C C G G applications High Efficiency due to Low VCE(on), low switching losses TO-247AC TO-247AD and Ultra-low VF IRG7PH42UD1PbF IRG7PH42UD1-EP Rugged transient performance for increased reliability Excellent current sharing in parallel oper... See More ⇒

Keywords - ALL TRANSISTORS SPECS

 irg7ph42ud1.pdf Design, MOSFET, Power

 irg7ph42ud1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irg7ph42ud1.pdf Database, Innovation, IC, Electricity