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View irg7sc12f detailed specification:

PD - 96363 IRG7SC12FPbF INSULATED GATE BIPOLAR TRANSISTOR C Features VCES = 600V Low VCE (ON) Trench IGBT Technology Maximum Junction temperature 150 C IC = 8A, TC = 100 C 3 S short circuit SOA Square RBSOA G tSC 3 s, TJ(max) = 150 C Positive VCE (ON) Temperature co-efficient E Tight parameter distribution VCE(on) typ. = 1.60V Lead Free Package n-channel C Benefits E G High Efficiency in a HVAC, Refrigerator applications Rugged transient Performance for increased reliability D2Pak IRG7SC12FPbF Excellent Current sharing in parallel operation Low EMI G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 24 IC @ TC = 100 C Continuous Collector Current 13 INOMINAL A Nominal Current 8 ICM Pulse... See More ⇒

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