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View irgp20b120u-e detailed specification:

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through (NPT) C Technology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature Coefficient VCE(on) typ. = 3.05V G Extended lead TO-247 package VGE = 15V, IC = 20A, 25 C E Benefits n-channel Benchmark efficiency above 20KHz Optimized for Welding, UPS, and Induction Heating applications Rugged with UltraFast performance Low EMI Significantly Less Snubber required Excellent Current sharing in Parallel operation Longer leads for easier mounting TO-247AD Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 1200 V IC @ TC = 25 C Continuous Collector Current (Fig.1) 40 IC @ TC = 100 C Continuous Collector Current (Fig.1) 20 A ... See More ⇒

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