View irgp20b120ud-e detailed specification:

irgp20b120ud-eirgp20b120ud-e

PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V UltraFast Non Punch Through (NPT) Technology VCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25 C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25 C UltraSoft Diode Recovery Characteristics E Positive VCE(on) Temperature Coefficient N-channel Extended Lead TO-247AD Package Benefits Benchmark Efficiency Above 20KHz Optimized for Welding, UPS, and Induction Heating Applications Rugged with UltraFast Performance Low EMI Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation Longer Leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter B... See More ⇒

 

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