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View irgp30b60kd-e detailed specification:

PD - 94388B IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10 s Short Circuit Capability. IC = 30A, TC=100 C Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. G tsc > 10 s, TJ=150 C Positive VCE (on) Temperature Coefficient. TO-247AD Package E VCE(on) typ. = 1.95V n-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-247AD Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25 C Continuous Collector Current 60 IC @ TC = 100 C Continuous Collector Current 30 ICM Pulsed Collector Current 120 ILM Clamped Inductive Load Current 120 A IF... See More ⇒

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